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SEMICONDUCTOR KTH2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES B C High Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA). A Excellent Switching Characteristics. N DIM MILLIMETERS E A 4.70 MAX K G B 4.80 MAX D C 3.70 MAX D 0.45 J E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 H J _ 14.00 + 0.50 Collector-Base Voltage VCBO 40 V F F K 0.55 MAX L 2.30 Collector-Emitter Voltage